型号:

FDFS6N303

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CH 30V 6A 8-SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FDFS6N303 PDF
标准包装 1
系列 -
FET 型 MOSFET N 通道,金属氧化物
FET 特点 二极管(隔离式)
漏极至源极电压(Vdss) 30V
电流 - 连续漏极(Id) @ 25° C 6A
开态Rds(最大)@ Id, Vgs @ 25° C 35 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大) 3V @ 250µA
闸电荷(Qg) @ Vgs 17nC @ 10V
输入电容 (Ciss) @ Vds 350pF @ 15V
功率 - 最大 900mW
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 剪切带 (CT)
其它名称 FDFS6N303CT
FDFS6N303_NLCT
FDFS6N303_NLCT-ND
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